2SK3314(Q) Toshiba, 2SK3314(Q) Datasheet

2SK3314(Q)

Manufacturer Part Number

2SK3314(Q)

Description

MOSFET N-CH 500V 15A 2-16C1B

Manufacturer

Toshiba

Datasheet

1.2SK3314Q.pdf (6 pages)

Specifications of 2SK3314(Q)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

490 mOhm @ 7A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

15A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

58nC @ 10V

Input Capacitance (ciss) @ Vds

2600pF @ 10V

Power - Max

150W

Mounting Type

Through Hole

Package / Case

2-16C1B (TO-247 N)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.49 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

15 A

Power Dissipation

150 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 6
Download datasheet (413Kb)

Chopper Regulator and DC−DC Converter Applications

Motor Drive Applications

Absolute Maximum Ratings

Thermal Characteristics

Fast reverse recovery time

Built-in high-speed free-wheeling diode

Low drain−source ON-resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostaticsensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

DD =

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

90 V, T

Pulse (Note 1)

= 20 kΩ)

: I

: V

= 25°C (initial), L = 4.76 mH, R

(Note 1)

(Note 2)

DSS

= 2.0 to 4.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

: t

: R

: |Y

DGR

GSS

DSS

stg

Symbol

DS (ON)

th (ch−a)

th (ch−c)

2SK3314

= 105 ns (typ.)

| = 9.9 S (typ.)

= 0.35 Ω (typ.)

= 10 V, I

−55 to 150

Rating

= 500 V)

500

±30

150

630

150

0.833

Max

= 25 Ω, I

= 1 mA)

°C / W

Unit

°C

= 15 A

Weight: 4.6 g (typ.)

JEDEC

JEITA

TOSHIBA

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

2-16C1B

2010-03-07

―

2SK3314

Unit: mm

Related parts for 2SK3314(Q)

2SK3314(Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

3 2SK3314 2010-03-07 ...

Page 4

− − − − − 4 2SK3314 − − − 2010-03-07 ...

Page 5

Ω 4. 2SK3314 ⎛ ⎞ VDSS ⎜ ⎟ = ⋅ L ⋅ I ⋅ ⎜ ⎟ − V ⎝ ⎠ ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

Related keywords

2sk330
2sk3314
2sk3301
2sk3318
2sk3313
2SK3314(Q) datasheet
2SK3314(Q) data sheet
2SK3314(Q) pdf datasheet
2SK3314(Q) component
2SK3314(Q) part
2SK3314(Q) distributor
2SK3314(Q) RoHS
2SK3314(Q) datasheet download