BSS126 H6327 Infineon Technologies, BSS126 H6327 Datasheet - Page 3

• Manufacturer Part Number: BSS126 H6327
• Description: MOSFET N-CH 600V 21MA SOT23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS126 H6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21mA
• Vgs(th) (max) @ Id: 1.6V @ 8µA
• Gate Charge (qg) @ Vgs: 2.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.6
Parameter
Dynamic characteristics
I
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
D
=f(V
GS
); V
DS
=3 V; T
j
=25 °C
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
V
I
V
I
V
T
V
T
V
di
D
D
page 3
A
j
GS
DD
GS
DD
GS
GS
R
=0.01 A, R
=10 mA,
=25 °C
F
=25 °C
=300 V, I
/dt =100 A/µs
=-5 V, V
=300 V,
=-3…7 V,
=400 V,
=-3 to 5 V
=-5 V, I
F
F
DS
=16 mA,
G
=0.01 A,
=6 Ω
=25 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.05
0.10
0.81
13.2
typ.
115
160
2.4
1.0
6.1
9.7
1.2
1.4
21
14
-
-
0.016
0.064
max.
14.5
0.08
19.8
170
240
3.2
1.5
9.2
1.8
2.1
1.2
28
21
-
BSS126
Unit
pF
ns
nC
V
A
V
ns
nC
2009-08-18