BSS159N L6327 Infineon Technologies, BSS159N L6327 Datasheet - Page 5
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BSS159N L6327
Manufacturer Part Number
BSS159N L6327
Description
MOSFET N-CH 60V 230MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS159N_L6327.pdf
(9 pages)
Specifications of BSS159N L6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
3.5 Ohm @ 160mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
230mA
Vgs(th) (max) @ Id
2.4V @ 26µA
Gate Charge (qg) @ Vgs
2.9nC @ 5V
Input Capacitance (ciss) @ Vds
44pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.23 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000247297
Rev. 1.32
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.6
0.5
0.4
0.3
0.2
0.1
0.6
0.5
0.4
0.3
0.2
0.1
DS
0
GS
0
-4
); T
0
); |V
10 V
j
=25 °C
GS
DS
|>2|I
1 V
-3
2
D
|R
DS(on)max
-2
4
V
V
DS
GS
[V]
[V]
-1
6
-0.1 V
-0.2 V
0.1 V
0.5 V
0 V
0.2 V
8
0
10
page 5
1
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.25
0.15
0.05
0.3
0.2
0.1
10
D
0
=f(I
8
6
4
2
0
0.00
); T
0
D
j
); T
=25 °C
GS
0.1
j
=25 °C
0.10
0.2
-0.2 V
-0.1 V
I
I
D
D
0.3
0 V
[A]
[A]
1 V
10 V
0.1 V
0.2 V
0.20
0.4
0.5 V
BSS159N
0.5
2006-12-11
0.30
0.6