BSN304,126 NXP Semiconductors, BSN304,126 Datasheet - Page 4

• Manufacturer Part Number: BSN304,126
• Description: MOSFET N-CH 300V 300MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSN304,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 120pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934023530126; BSN304 AMO; BSN304 AMO

Philips Semiconductors
2001 Dec 11
handbook, halfpage
handbook, halfpage
N-channel enhancement mode
vertical D-MOS transistor
P tot
(W)
1.2
0.8
0.4
0
0
10 V
0 V
Fig.2 Switching times test circuit.
Fig.4 Power derating curve.
50
50
100
V DD = 50 V
I D
150
MSA631
T amb ( C)
MRC238
200
4
handbook, halfpage
handbook, halfpage
V
Fig.5
GS
(pF)
250
200
150
100
INPUT
OUTPUT
C
= 0; f = 1 MHz; T
50
0
0
Capacitance as a function of drain-source
voltage; typical values.
Fig.3 Input and output waveforms.
10 %
t on
j
= 25 C.
10
90 %
90 %
20
Product specification
V DS (V)
t off
BSN304
C oss
C iss
C rss
MLD765
MBB692
10 %
30