BSN304,126 NXP Semiconductors, BSN304,126 Datasheet - Page 7

• Manufacturer Part Number: BSN304,126
• Description: MOSFET N-CH 300V 300MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSN304,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 120pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934023530126; BSN304 AMO; BSN304 AMO

Philips Semiconductors
2001 Dec 11
handbook, halfpage
N-channel enhancement mode
vertical D-MOS transistor
Typical R
(1) I
(2) I
k
Fig.12 Temperature coefficient of drain-source
=
1.5
0.5
k
D
D
-------------------------------------------- - .
R
2
1
0
= 250 mA; V
= 20 mA; V
DS on
R
50
DSon
DS on
on-state resistance; typical values.
;
at 25 C
at T
GS
GS
j
0
= 2.4 V.
= 10 V.
50
100
(1)
(2)
T j ( C)
MLD771
150
7
handbook, halfpage
k
Fig.13 Temperature coefficient of gate-source
1.25
0.75
0.25
=
0.5
k
-------------------------------------------.
V
1
0
-50
GS th
V
GS th
threshold voltage; typical values.
at 25 C
at T
j
0
50
Product specification
100
T j ( C)
BSN304
MLD772
150