BSN304,126 NXP Semiconductors, BSN304,126 Datasheet - Page 8

• Manufacturer Part Number: BSN304,126
• Description: MOSFET N-CH 300V 300MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSN304,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 120pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934023530126; BSN304 AMO; BSN304 AMO

Philips Semiconductors
PACKAGE OUTLINES
2001 Dec 11
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
N-channel enhancement mode
vertical D-MOS transistor
DIMENSIONS (mm are the original dimensions)
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
SOT54 variant
VERSION
OUTLINE
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.56
b 1
IEC
b
1
0.45
0.40
c
4.8
4.4
D
TO-92 variant
JEDEC
1.7
1.4
d
REFERENCES
0
4.2
3.6
E
2.54
A
e
SC-43
scale
EIAJ
2.5
8
1.27
e 1
14.5
12.7
5 mm
L
L 2
L 1
L 1
max
2.5
(1)
max
2.5
L 2
L
PROJECTION
EUROPEAN
Product specification
ISSUE DATE
SOT54 variant
BSN304
98-03-26
b
c
e 1
e