STP40N20 STMicroelectronics, STP40N20 Datasheet - Page 13

• Manufacturer Part Number: STP40N20
• Description: MOSFET N-CH 200V 40A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP40N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 24 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 44 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4380-5

STB40N20 - STP40N20 - STP40N20FP - STW40N20
DIM.
øP
øR
A1
b1
b2
L1
L2
D
A
b
E
e
L
S
c
19.85
15.45
14.20
4.85
2.20
0.40
3.70
3.55
4.50
MIN.
1.0
2.0
3.0
TO-247 MECHANICAL DATA
18.50
5.45
5.50
mm.
TYP
20.15
15.75
14.80
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.140
0.177
0.19
0.14
MIN.
Package mechanical data
0.214
0.728
0.216
TYP.
inch
0.102
0.055
0.094
0.134
0.793
0.620
0.582
0.143
0.216
MAX.
0.20
0.03
0.17
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