STP40N20 STMicroelectronics, STP40N20 Datasheet - Page 4

• Manufacturer Part Number: STP40N20
• Description: MOSFET N-CH 200V 40A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP40N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 24 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 44 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4380-5

Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
I
C
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
rss
iss
gd
r
gs
f
g
(1)
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
R
(see
V
V
(see
D
STB40N20 - STP40N20 - STP40N20FP - STW40N20
C
GS
GS
GS
GS
DS
DS
DS
DS
DS
DD
DD
G
= 1mA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= 15V, I
= max ratings
= max ratings,
= ± 20V
= V
= 10V, I
= 25V, f = 1MHz,
= 0
= 10V
= 100V, I
= 160V, I
Figure
Figure
GS
, I
GS
D
16)
17)
D
GS
D
D
D
= 20A
= 20A
= 250µA
=0
= 20A
= 10V
= 40A,
Min.
Min.
200
2
0.038
2500
Typ.
Typ.
13.2
35.5
510
30
78
20
44
74
22
75
3
0.045
Max.
Max.
±100
10
1
4
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
ns
ns
ns
ns
nA
S
V
V
Ω