STP40N20 STMicroelectronics, STP40N20 Datasheet - Page 6

• Manufacturer Part Number: STP40N20
• Description: MOSFET N-CH 200V 40A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP40N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 24 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 44 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4380-5

Electrical characteristics
2.1
6/18
Figure 1.
Figure 3.
Figure 5.
Safe operating area for TO-
220/D
Safe operating area for TO-247
Safe operating area for TO-220FP
Electrical characteristics (curves)
2
PAK
STB40N20 - STP40N20 - STP40N20FP - STW40N20
Figure 2.
Figure 4.
Figure 6.
Thermal impedance area for TO-
220/D
Thermal impedance for TO-247
Thermal impedancefor TO-220FP
2
PAK