2SK2968 Toshiba, 2SK2968 Datasheet
2SK2968
Manufacturer Part Number
2SK2968
Description
MOSFET N-CH 900V 10A 2-16C1B
Manufacturer
Toshiba
Datasheet
1.2SK2968.pdf
(6 pages)
Specifications of 2SK2968
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.25 Ohm @ 4A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2150pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2968
Manufacturer:
TOS
Quantity:
5 000
Company:
Part Number:
2SK2968
Manufacturer:
PANASONIC
Quantity:
12 500
Part Number:
2SK2968
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
DC−DC Converter, Relay Drive and Motor Drive
Applications
l Low drain−source ON resistance
l High forward transfer admittance
l Low leakage current : I
l Enhancement−mode : V
Maximum Ratings
Thermal Characteristics
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
DD
Characteristics
Characteristics
= 90 V, T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
(Ta = 25°C)
= 25°C (initial), L = 14.9 mH, R
DSS
th
(Note 1)
(Note 2)
= 2.0~4.0 V (V
= 100 µA (max) (V
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
AS
AR
stg
D
ch
D
DS (ON)
2SK2968
fs
DS
| = 7.6 S (typ.)
= 10 V, I
DS
= 1.05 Ω (typ.)
−55~150
= 720 V)
Rating
0.833
Max
900
900
±30
150
810
150
10
30
10
15
50
1
D
G
= 1 mA)
= 25 Ω, I
°C / W
°C / W
AR
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 10 A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
2-16C1B
2002-07-31
2SK2968
―
―
Unit: mm
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2SK2968 Summary of contents
Page 1
... Rating Unit V 900 V DSS V 900 V DGR V ±30 V GSS 150 810 150 ° −55~150 °C stg Symbol Max Unit R 0.833 ° (ch− ° (ch− Ω 2SK2968 Unit GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) 2002-07-31 ...
Page 2
... Symbol Test Condition I — — DRP DSF 100 A / µ 2SK2968 Min Typ. Max — — ±10 ±30 — — — — 100 900 — — 2.0 — 4.0 — 1.05 1.25 3.5 7.6 — — 2150 — — 35 — ...
Page 3
... 3 2SK2968 2002-07-31 ...
Page 4
... 4 2SK2968 2002-07-31 ...
Page 5
... Ω 14 2SK2968 1 B æ ö VDSS = × L × × ç ÷ è VDSS DD ø 2002-07-31 ...
Page 6
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2SK2968 000707EAA 2002-07-31 ...