2SK1359 Toshiba, 2SK1359 Datasheet - Page 2
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2SK1359
Manufacturer Part Number
2SK1359
Description
MOSFET N-CH 1KV 5A 2-16C1B
Manufacturer
Toshiba
Datasheet
1.2SK1359F.pdf
(6 pages)
Specifications of 2SK1359
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.8 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
3.5V @ 1mA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK1359
Manufacturer:
TOS
Quantity:
5 000
Company:
Part Number:
2SK1359
Manufacturer:
ST
Quantity:
50 000
Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
K1359
Characteristics
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
Part No. (or abbreviation code)
Lot No.
Note 2
(Note 1)
(Note 1)
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
C
I
I
|Y
C
C
Q
Q
GSS
DRP
DSS
V
I
t
t
Q
DSF
DR
on
off
oss
t
rss
t
iss
gs
gd
th
fs
r
f
g
|
V
V
I
V
V
V
V
V
I
D
DR
GS
DS
DS
GS
DS
DS
DD
= 10 mA, V
Note 2: A line under a Lot No. identifies the indication of product
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
= 4 A, V
= 800 V, V
= 10 V, I
= 20 V, I
= 25 V, V
≈ 400 V, V
= ±25 V, V
= 10 V, I
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
GS
2
D
D
D
GS
(Ta = 25°C)
GS
Test Condition
Test Condition
= 1 mA
= 2 A
GS
DS
GS
= 2 A
= 0 V
= 0 V
= 0V, f = 1 MHz
= 10 V, I
= 0 V
= 0 V
—
—
D
= 4 A
1000
Min
Min
1.5
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
Typ.
700
100
3.0
2.0
55
18
30
12
70
60
35
25
—
—
—
—
—
—
—
2009-09-29
2SK1359
Max
−1.9
Max
±50
300
3.5
3.8
15
—
—
—
—
—
—
—
—
—
—
—
—
5
Unit
Unit
nA
μA
nC
pF
ns
V
V
Ω
S
A
A
V