2SK2598(TE24L) Toshiba, 2SK2598(TE24L) Datasheet

2SK2598(TE24L)

Manufacturer Part Number

2SK2598(TE24L)

Description

MOSFET N-CH 250V 13A TO-220FL

Manufacturer

Toshiba

Datasheet

1.2SK2598TE24L.pdf (6 pages)

Specifications of 2SK2598(TE24L)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

250 mOhm @ 6.5A, 10V

Drain To Source Voltage (vdss)

250V

Current - Continuous Drain (id) @ 25° C

13A

Vgs(th) (max) @ Id

3.5V @ 1mA

Gate Charge (qg) @ Vgs

40nC @ 10V

Input Capacitance (ciss) @ Vds

1800pF @ 10V

Power - Max

60W

Mounting Type

Through Hole

Package / Case

TO-220FL

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

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Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may

cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate reliability upon

reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

temperature

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

= 50 V, T

Pulse (Note 1)

= 20 kΩ)

= 25°C (initial), L = 1.48 mH, R

(Note 1)

(Note 2)

: I

: V

DSS

= 1.5 to 3.5 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

: R

: |Y

DGR

GSS

DSS

stg

Symbol

DS (ON)

2SK2598

th (ch−a)

th (ch−c)

| = 13 S (typ.)

= 0.18 Ω (typ.)

−55 to 150

= 10 V, I

Rating

250

±20

148

150

2.08

83.3

Max

= 250 V)

= 25 Ω, I

= 1 mA)

°C / W

Unit

°C

= 13 A

Weight: 1.5 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

2-10S1B

2-10S2B

2009-09-29

―

2SK2598

Unit: mm

Related parts for 2SK2598(TE24L)

2SK2598(TE24L) Summary of contents

Page 1

... TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I DSS Enhancement mode : V th Absolute Maximum Ratings Characteristics Drain−source voltage Drain−gate voltage ( kΩ ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

3 2SK2598 2009-09-29 ...

Page 4

4 2SK2598 2009-09-29 ...

Page 5

Ω 1. 2SK2598 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − V VDSS DD ⎝ ⎠ ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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