2SK2615(TE12L) Toshiba, 2SK2615(TE12L) Datasheet - Page 2

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2SK2615(TE12L)

Manufacturer Part Number
2SK2615(TE12L)
Description
MOSFET N-CH 60V 2A PW-MINI
Manufacturer
Toshiba
Datasheet

Specifications of 2SK2615(TE12L)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
6nC @ 10V
Input Capacitance (ciss) @ Vds
150pF @ 10V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
PW-MINI
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2615(TE12L)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Electrical Characteristics
Source−Drain Ratings and Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
(Note 1)
(Note 1)
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
Q
Q
t
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
V
V
I
V
VGS = 4 V, ID = 1 A
VGS = 10 V, ID = 1 A
V
V
V
I
I
dI
D
DR
DR
GS
DS
DS
DS
DS
DD
DR
= 10 mA, V
= 2 A, V
= 2 A, V
= 60 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
≈ 48 V, V
/ dt = 50 A / μs
GS
GS
2
D
D
GS
(Ta = 25°C)
GS
GS
GS
Test Condition
Test Condition
= 1 mA
= 1 A
DS
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
D
= 2 A
Min
Min
0.8
1.0
60
Typ.
0.33
0.23
Typ.
150
150
100
2.0
6.0
4.6
1.4
25
70
25
30
50
40
2009-09-29
2SK2615
0.44
0.30
−1.5
Max
Max
±10
100
2.0
2
6
Unit
Unit
μA
μA
nC
nC
pF
ns
ns
V
V
S
A
A
V

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