2SK3569 Toshiba, 2SK3569 Datasheet - Page 4

• Manufacturer Part Number: 2SK3569
• Description: MOSFET N-CH 600V 10A TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3569

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220 (SIS)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 750mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

10000
1000
100
2.5
2.0
1.5
1.0
0.5
10
80
60
40
20
−80
0
1
0
0.1
0
COMMON SOURCE
V GS = 0 V
f = 1 MHz
Tc = 25°C
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
PULSE TEST
CASE TEMPERATURE Tc (°C)
CASE TEMPERATURE Tc (°C)
−40
40
V GS = 10 V
CAPACITANCE – V
0
1
R
80
DS (ON)
P
D
40
– Tc
– Tc
120
5A
80
10
DS
I D = 10A
DS
160
2.5A
120
C oss
C rss
C iss
(V)
160
100
200
4
500
400
300
100
100
200
0.1
10
−80
0
1
5
4
3
2
1
0
0
0
V DS
V DS
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
V DS = 10 V
I D = 1 mA
PULSE TEST
COMMON SOURCE
10
TOTAL GATE CHARGE Q
CASE TEMPERATURE Tc (°C)
PULSE TEST
−0.2
−40
10
Tc = 25°C
DYNAMIC INPUT / OUTPUT
5
V GS
V GS
CHARACTERISTICS
V DD = 100 V
−0.4
20
0
3
I
DR
V
1
th
−0.6
– V
40
30
– Tc
200
DS
V GS = 0, −1 V
−0.8
40
80
Common source
I D = 10 A
Tc = 25°C
Pulse test
g
400
DS
120
(nC)
−1.0
50
(V)
2010-01-29
2SK3569
−1.2
160
60
20
16
12
8
4
0