BSS139 E6906 Infineon Technologies, BSS139 E6906 Datasheet

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BSS139 E6906

Manufacturer Part Number
BSS139 E6906
Description
MOSFET N-CH 250V 100MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSS139 E6906

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
14 Ohm @ 0.1mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
1V @ 56µA
Gate Charge (qg) @ Vgs
3.5nC @ 5V
Input Capacitance (ciss) @ Vds
76pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS139E6906XT
SP000055415
Rev. 1.62
1)
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V
• Pb-free lead-plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
Type
BSS139
BSS139
see table on next page and diagram 11
®
Small-Signal-Transistor
Package
PG-SOT-23
PG-SOT-23
GS(th)
indicator on reel
j
=25 °C, unless otherwise specified
Tape and Reel Information
L6327: 3000 pcs/reel
L6906: 3000 pcs/reel sorted in V
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
j
GS
tot
, T
stg
T
T
T
I
di /dt =200 A/µs,
T
T
D
page 1
A
A
A
j,max
A
=0.1 A,V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
=200 V,
GS(th)
Product Summary
V
R
I
DSS,min
DS
DS(on),max
bands
1)
Marking
STs
STs
-55 ... 150
55/150/56
Class 1
Value
0.10
0.08
0.36
±20
0.4
PG-SOT-23
6
Pb-free
Yes
Yes
250
0.03
30
BSS139
Unit
A
kV/µs
V
W
°C
V
A
2006-11-27

Related parts for BSS139 E6906

BSS139 E6906 Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V indicator on reel GS(th) • Pb-free lead-plating; RoHS compliant Type Package BSS139 PG-SOT-23 BSS139 PG-SOT-23 Maximum ratings =25 °C, unless otherwise ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current Gate-source leakage current On-state drain current Drain-source on-state resistance Transconductance Threshold voltage V sorted in bands GS(th) ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

Page 4

Power dissipation P =f(T ) tot A 0.4 0.3 0.2 0 Safe operating area I =f =25 ° parameter limited by on-state resistance ...

Page 5

Typ. output characteristics I =f =25 ° parameter 0 0.16 0.12 0.08 0. Typ. transfer characteristics I =f |>2|I |R ...

Page 6

Drain-source on-state resistance R =f =0.015 A; V DS(on % -60 - Threshold voltage bands I =f =25 °C D ...

Page 7

Forward characteristics of reverse diode I =f parameter 0.1 150 °C 0.01 0.001 0 0 Drain-source breakdown voltage V =f =250 µA BR(DSS 300 280 260 240 ...

Page 8

Package Outline: Footprint: Dimensions in mm Rev. 1.62 Packaging: page 8 BSS139 2006-11-27 ...

Page 9

... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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