BSS159N E6327 Infineon Technologies, BSS159N E6327 Datasheet - Page 6

• Manufacturer Part Number: BSS159N E6327
• Description: MOSFET N-CH 60V 230MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS159N E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 230mA
• Vgs(th) (max) @ Id: 2.4V @ 26µA
• Gate Charge (qg) @ Vgs: 2.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 44pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 230mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: -2.8V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSS159NE6327XT; SP000014638

Rev. 1.32
9 Drain-source on-state resistance
R
11 Threshold voltage bands
I
D
DS(on)
=f(V
0.001
0.01
0.1
20
16
12
=f(T
GS
1
8
4
0
-3.5
-60
); V
j
); I
DS
D
=3 V; T
-20
=0.07 A; V
N
20
-3
j
98 %
=25 °C
M
V
GS
GS
T
j
L
=0 V
[V]
60
[°C]
typ
K
100
-2.5
J
140
26 µA
180
page 6
-2
10 Typ. gate threshold voltage
V
parameter: I
12 Typ. capacitances
C =f(V
GS(th)
-2.4
-2.8
-3.2
-3.6
10
10
10
-2
-4
=f(T
DS
2
1
0
-60
); V
0
j
); V
D
GS
-20
=-10 V; f =1 MHz
DS
=3 V; I
10
20
D
=26 µA
V
T
DS
j
60
20
[°C]
98 %
typ
2 %
[V]
100
30
BSS159N
140
Ciss
Crss
Coss
2006-12-11
180
40