BSS159N E6906 Infineon Technologies, BSS159N E6906 Datasheet - Page 7

• Manufacturer Part Number: BSS159N E6906
• Description: MOSFET N-CH 60V 230MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS159N E6906

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 230mA
• Vgs(th) (max) @ Id: 2.4V @ 26µA
• Gate Charge (qg) @ Vgs: 2.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 44pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS159NE6906XT; SP000055412

Rev. 1.32
13 Forward characteristics of reverse diode
I
parameter: T
16 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
0.001
0.01
0.1
70
50
SD
1
-60
=f(T
)
0
j
); I
j
-20
D
=250 µA
0.4
150 °C
20
V
T
SD
j
60
[°C]
0.8
[V]
25 °C
100
150 °C, 98%
25 °C, 98%
1.2
140
180
page 7
15 Typ. gate charge
V
parameter: V
GS
=f(Q
-1
-2
-3
-4
6
5
4
3
2
1
0
0
gate
); I
DD
D
=0.16 A pulsed
Q
0.2 VDS(max)
gate
1
[nC]
0.5 VDS(max)
0.8 VDS(max)
BSS159N
2006-12-11
2