NTMS4107NR2G ON Semiconductor, NTMS4107NR2G Datasheet

NTMS4107NR2G

Manufacturer Part Number

NTMS4107NR2G

Description

MOSFET N-CH 30V 11A 8-SOIC

Manufacturer

ON Semiconductor

Datasheet

1.NTMS4107NR2G.pdf (6 pages)

Specifications of NTMS4107NR2G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4.5 mOhm @ 15A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

11A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

45nC @ 4.5V

Input Capacitance (ciss) @ Vds

6000pF @ 15V

Power - Max

930mW

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTMS4107NR2G
NTMS4107NR2GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTMS4107NR2G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 6
Download datasheet (73Kb)

NTMS4107N

Power MOSFET

30 V, 18 A, Single N−Channel, SO−8

Features

•

Applications

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface−mounted on FR4 board using 1″ sq. pad size

2. Surface−mounted on FR4 board using the minimum recommended pad size

February, 2006 − Rev. 3

MAXIMUM RATINGS

THERMAL RESISTANCE RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 2)

Power Dissipation

(Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature

Continuous Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (V

L = 1 mH, R

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t v 10 s (Note 1)

Junction−to−Ambient − Steady State (Note 2)

Ultra Low R

Optimized for Low Side Synchronous Applications

High Speed Switching Capability

Pb−Free Package is Available

Notebook Computer Vcore Applications

Network Applications

DC−DC Converters

(Cu area = 1.127″ sq. [1 oz] including traces).

(Cu area = 0.412″ sq.).

= 30 V, V

= 25 W)

DS(on)

Rating

(at 4.5 V

t v10 s

Steady

= 10 V, I

State

= 25°C unless otherwise noted)

= 10 ms

), Low Gate Resistance and Low Q

= 32 A,

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

, T

DSS

qJA

stg

−55 to 150

Value

$20

1.67

0.93

Max

512

260

135

2.5

8.0

3.0

°C/W

Unit

°C

†For information on tape and reel specifications,

NTMS4107NR2

NTMS4107NR2G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(BR)DSS

30 V

CASE 751

STYLE 12

Device

(Note: Microdot may be in either location)

SO−8

4107N

ORDERING INFORMATION

http://onsemi.com

4.7 mW @ 4.5 V

3.4 mW @ 10 V

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

Package

DS(on)

Source

SO−8

Gate

MARKING DIAGRAM/

Publication Order Number:

PIN ASSIGNMENT

TYP

(Top View)

2500/Tape & Reel

NTMS4107N/D

Shipping

18 A

MAX

Drain

†

Related parts for NTMS4107NR2G

NTMS4107NR2G Summary of contents

Page 1

... AS °C T 260 L Symbol Max Unit °C NTMS4107NR2 qJA R 50 qJA NTMS4107NR2G R 135 qJA †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES AND ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.008 ...

Page 4

C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 4 ...

Page 5

... G C SEATING PLANE −Z− 0.25 (0.010 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTMS4107N PACKAGE DIMENSIONS SO−8 CASE 751−07 ISSUE 0.10 (0.004 SOLDERING FOOTPRINT* 1 ...

Page 6

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTMS4107N N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi ...

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