NTMS4107NR2G ON Semiconductor, NTMS4107NR2G Datasheet - Page 5

• Manufacturer Part Number: NTMS4107NR2G
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMS4107NR2G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 15V
• Power - Max: 930mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMS4107NR2G; NTMS4107NR2GOSTR

−Z−
−Y−
B
H
−X−
8
1
0.25 (0.010)
G
A
D
4
5
M
Z
S
Y
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
S
C
0.25 (0.010)
X
SEATING
PLANE
S
0.024
0.10 (0.004)
0.6
0.275
M
7.0
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
Y
http://onsemi.com
M
N
NTMS4107N
CASE 751−07
X 45
ISSUE AG
_
M
SO−8
5
K
SCALE 6:1
0.060
0.155
1.52
4.0
1.270
0.050
J
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
5. DIMENSION D DOES NOT INCLUDE DAMBAR
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
ANSI Y14.5M, 1982.
MOLD PROTRUSION.
PER SIDE.
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
STANDARD IS 751−07.
STYLE 12:
DIM
A
B
C
D
G
H
K
M
N
J
S
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
MILLIMETERS
MIN
4.80
3.80
1.35
0.33
0.10
0.19
0.40
0.25
5.80
0
1.27 BSC
_
MAX
5.00
4.00
1.75
0.51
0.25
0.25
1.27
0.50
6.20
8
_
0.189
0.150
0.053
0.013
0.004
0.007
0.016
0.010
0.228
MIN
0.050 BSC
0
INCHES
_
0.197
0.157
0.069
0.020
0.010
0.010
0.050
0.020
0.244
MAX
8
_