NTMS4107NR2G ON Semiconductor, NTMS4107NR2G Datasheet - Page 2

• Manufacturer Part Number: NTMS4107NR2G
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMS4107NR2G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 15V
• Power - Max: 930mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMS4107NR2G; NTMS4107NR2GOSTR

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Temperature Coefficient
Characteristic
(T
J
= 25°C unless otherwise noted)
V
V
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
Q
t
(BR)DSS
t
C
C
d(OFF)
GS(TH)
C
I
I
DS(on)
G(TOT)
Q
Q
d(ON)
Q
V
g
GSS
G(TH)
t
DSS
R
OSS
RSS
RR
t
t
ISS
t
FS
GS
GD
t
SD
RR
a
b
r
f
G
/T
/T
J
http://onsemi.com
J
NTMS4107N
V
V
V
V
GS
GS
GS
GS
V
= 0 V, V
= 0 V, f = 1.0 MHz, V
= 0 V, I
GS
V
= 4.5 V, V
V
2
V
V
V
I
DS
GS
V
V
GS
D
GS
GS
= 0 V, d
GS
DS
= 1.0 A, R
Test Condition
= 0 V, V
= 10 V, V
= V
= 0 V, I
= 4.5 V, I
= 10 V, I
= 15 V, I
S
DS
I
S
= 3.0 A
DS
DS
= 3.0 A
= 24 V
IS
, I
/d
GS
D
= 15 V, I
D
DS
G
t
D
D
= 250 mA
D
= 250 mA
= 100 A/ms,
= $20 V
= 6.0 W
= 15 A
= 18 A
= 14 A
= 15 V,
T
T
T
T
DS
J
J
D
J
J
= 125°C
= 125°C
= 25°C
= 25°C
= 18 A
= 15 V
Min
1.0
30
6000
1030
16.3
19.3
0.60
Typ
550
7.4
4.7
3.4
6.5
9.0
0.8
0.6
21
25
45
10
94
38
41
20
21
48
$100
Max
1.0
2.5
5.5
4.5
1.1
10
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
ns
ns
W
V
V
S
V