NTMS4107NR2G ON Semiconductor, NTMS4107NR2G Datasheet - Page 3

• Manufacturer Part Number: NTMS4107NR2G
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMS4107NR2G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 15V
• Power - Max: 930mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMS4107NR2G; NTMS4107NR2GOSTR

0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
28
24
20
16
12
8
4
0
1.5
0.5
0
0
Figure 3. On−Resistance vs. Drain Current and
2
1
0
−50
2
V
1
V
V
I
V
D
GS
DS
GS
Figure 1. On−Region Characteristics
GS
−25
= 16 A
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
= 4 V to 10 V
= 10 V
= 12 V
6
2
I
T
D,
3.2 V
J
, JUNCTION TEMPERATURE (°C)
3
0
DRAIN CURRENT (AMPS)
10
Temperature
4
25
Temperature
T
T
T
5
J
J
J
14
= 125°C
= 25°C
= −55°C
50
6
75
TYPICAL PERFORMANCE CURVES
18
7
100
8
T
J
= 25°C
22
2.8 V
http://onsemi.com
3.0 V
2.6 V
9
125
NTMS4107N
10
26
150
3
1000000
100000
10000
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
1000
100
28
24
20
16
12
0
8
4
0
2
0
Figure 4. On−Resistance vs. Drain Current and
0
T
V
V
J
Figure 6. Drain−to−Source Leakage Current
DS
GS
= 25°C
V
V
≥ 10 V
DS
GS
= 0 V
6
5
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
I
D,
DRAIN CURRENT (AMPS)
T
T
J
10
10
J
= 25°C
Gate Voltage
= 125°C
T
T
2
vs. Voltage
V
V
J
J
GS
GS
= 150°C
= 125°C
15
14
= 10 V
= 4.5 V
3
T
J
18
20
= −55°C
4
22
25
26
30
5