NTMS4107NR2G ON Semiconductor, NTMS4107NR2G Datasheet - Page 4

• Manufacturer Part Number: NTMS4107NR2G
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMS4107NR2G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 15V
• Power - Max: 930mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMS4107NR2G; NTMS4107NR2GOSTR

1000
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
8000
7000
6000
5000
4000
3000
2000
1000
100
10
1
0
1
0
V
I
V
D
DD
GS
C
= 1 A
rss
= 15 V
= 4.5 V
t
Figure 9. Resistive Switching Time
t
d(on)
d(off)
Figure 7. Capacitance Variation
t
t
Variation vs. Gate Resistance
5
f
r
R
G
, GATE RESISTANCE (OHMS)
10
10
1000
0.01
100
0.1
10
1
0.1
15
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
TYPICAL PERFORMANCE CURVES
GS
C
= 25°C
V
= 20 V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
T
R
THERMAL LIMIT
PACKAGE LIMIT
J
DS(on)
= 25°C
http://onsemi.com
Safe Operating Area
NTMS4107N
1
C
C
LIMIT
oss
iss
100
25
4
10
12
10
8
6
4
2
0
8
6
4
2
0
0
0
Q
V
T
Figure 10. Diode Forward Voltage vs. Current
10
Drain−To−Source Voltage vs. Total Charge
GS
10
GS
J
V
= 25°C
SD
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
20
Figure 8. Gate−To−Source and
0.2
QT
Q
Q
GD
G
10 ms
100 ms
10 ms
dc
1 ms
, TOTAL GATE CHARGE (nC)
30
40
100
0.4
50
60
0.6
V
GS
70
80
0.8
I
T
D
J
= 16 A
= 25°C
90
100
1