BFR92AT/R NXP Semiconductors, BFR92AT/R Datasheet - Page 3

• Manufacturer Part Number: BFR92AT/R
• Description: Trans GP BJT NPN 15V 0.025A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFR92AT/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 40@15mA@10V
• Maximum Operating Frequency: 5000(Typ) MHz
• Maximum Dc Collector Current: 0.025 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2 V

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. Measured on the same die in a SOT37 package (BFR90A).
3. d
4. I
R
I
h
C
C
C
f
G
F
V
d
SYMBOL
SYMBOL
j
CBO
T
FE
2
O
th j-s
= 25 C unless otherwise specified.
c
e
re
NPN 5 GHz wideband transistor
UM
V
V
V
measured at f
V
V
measured at f
C
im
s
p
q
r
p
q
UM
= 14 mA; V
= V
is the temperature at the soldering point of the collector pin.
= V
= V
= 60 mV at f
= 60 mV at f
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
O
O
O
at d
thermal resistance from junction to soldering point T
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain (note 1)
noise figure
output voltage
second order intermodulation
distortion
6 dB; f
6 dB; f
im
CE
p
p
= 60 dB; f
+ f
p
q
+ f
r
q
= 10 V; R
= 250 MHz;
= 560 MHz;
= 805.25 MHz;
PARAMETER
= 803.25 MHz;
q
q
= 810 MHz.
f
r
= 793.25 MHz.
p
L
PARAMETER
= 795.25 MHz;
= 75 ; VSWR
C
= 14 mA; V
I
I
I
see Fig.5
I
I
I
see Fig.6
I
T
I
T
I
see Figs 13 and 14
I
see Figs 13 and 14
notes 2 and 3
notes 2 and 4; see Fig.16
CE
E
C
E
C
C
C
C
C
C
C
amb
amb
s
s
= 0; V
= 15 mA; V
= i
= i
= i
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
= 5 mA; V
=
=
= 10 V; R
2; T
Rev. 04 - 2 March 2009
e
c
c
= 25 C
= 25 C
opt
opt
= 0; V
= 0; V
= 0; V
amb
CB
; T
; T
= 25 C
amb
amb
= 10 V
CONDITIONS
CB
EB
CE
CE
CE
L
12
CE
CE
CE
CE
= 75 ; VSWR
= 25 C;
= 25 C;
= 10 V; f = 1 MHz;
= 10 V; f = 1 MHz
= 10 V; f = 1 MHz
= 10 V; f = 1 GHz;
= 10 V; f = 2 GHz;
is zero and
= 10 V; f = 500 MHz;
= 10 V; see Fig.4
= 10 V; f = 1 GHz;
= 10 V; f = 2 GHz;
s
CONDITIONS
95 C; note 1
G
UM
2; T
=
amb
10 log
= 25 C
65
MIN.
------------------------------------------------------------- - dB ˙
VALUE
1
260
–
S
90
0.6
1.2
0.35
5
14
8
2.1
3
150
TYP.
50
11
Product specification
S
2
21
1
2
50
135
MAX.
BFR92A
–
S
22
3 of 12
UNIT
K/W
2
nA
pF
pF
pF
GHz
dB
dB
dB
dB
mV
dB
UNIT
.