BFR92AT/R NXP Semiconductors, BFR92AT/R Datasheet - Page 4

• Manufacturer Part Number: BFR92AT/R
• Description: Trans GP BJT NPN 15V 0.025A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFR92AT/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 40@15mA@10V
• Maximum Operating Frequency: 5000(Typ) MHz
• Maximum Dc Collector Current: 0.025 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2 V

NXP Semiconductors
handbook, full pagewidth
handbook, halfpage
NPN 5 GHz wideband transistor
(mW)
L1 = L3 = 5 H choke.
L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
P tot
400
300
200
100
0
0
Fig.3 Power derating curve.
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
50
100
75
input
V BB
150
2.2 nF
1 nF
T s (
MEA425 - 1
L1
o
C)
200
33 k
Rev. 04 - 2 March 2009
300
3.3 pF
L2
DUT
1 nF
handbook, halfpage
L3
V
Fig.4
CE
h FE
18
120
= 10 V; T
80
40
0
2.2 nF
0
DC current gain as a function of collector
current; typical values.
j
0.82 pF
= 25 C.
1 nF
MBB269
V CC
output
10
75
20
Product specification
I
C
(mA)
BFR92A
MCD074
4 of 12
30