BFR92AT/R NXP Semiconductors, BFR92AT/R Datasheet - Page 7

• Manufacturer Part Number: BFR92AT/R
• Description: Trans GP BJT NPN 15V 0.025A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFR92AT/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 40@15mA@10V
• Maximum Operating Frequency: 5000(Typ) MHz
• Maximum Dc Collector Current: 0.025 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2 V

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
d im
(dB)
V
V
f
Measured in MATV test circuit (see Fig.2).
Fig.13 Minimum noise figure as a function of
(dB)
p
CE
CE
+ f
F
45
50
55
60
65
70
= 10 V.
= 10 V; V
q
4
3
2
0
10
1
1
f
Fig.15 Intermodulation distortion;
r
= 793.25 MHz; T
collector current; typical values.
O
= 150 mV (43.5 dBmV);
typical values.
amb
= 25 C.
20
10
f = 2 GHz
1 GHz
500 MHz
I
I
C
C
(mA)
(mA)
MBB282
MCD081
30
10
Rev. 04 - 2 March 2009
2
handbook, halfpage
handbook, halfpage
(dB)
V
d 2
V
Measured in MATV test circuit (see Fig.2).
Fig.14 Minimum noise figure as a function of
Fig.16 Second order intermodulation distortion;
(dB)
CE
CE
F
35
40
45
50
55
60
= 10 V.
= 10 V; V
4
3
2
0
1
10
10
2
frequency; typical values.
typical values.
O
= 60 mV; f
p
+ f
q
20
10
f
r
3
= 810 MHz; T
10 mA
I
5 mA
I
Product specification
C
C
f (MHz)
(mA)
= 15 mA
amb
BFR92A
MBB283
MCD082
= 25 C.
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30
10
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