BA 592 E6433 Infineon Technologies, BA 592 E6433 Datasheet - Page 3
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BA 592 E6433
Manufacturer Part Number
BA 592 E6433
Description
DIODE RF SW 35V 100MA SOD-323
Manufacturer
Infineon Technologies
Datasheet
1.BA_892-02V_E6127.pdf
(11 pages)
Specifications of BA 592 E6433
Package / Case
SOD-323
Diode Type
Standard - Single
Voltage - Peak Reverse (max)
35V
Current - Max
100mA
Capacitance @ Vr, F
1.1pF @ 3V, 1MHz
Resistance @ If, F
500 mOhm @ 10mA, 100MHz
Configuration
Single
Reverse Voltage
35 V
Forward Continuous Current
100 mA
Carrier Life
0.12 us
Forward Voltage Drop
1 V
Maximum Diode Capacitance
1.1 pF at 3 V
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
0.5 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
0.7 Ohms at 3 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BA592E6433XT
SP000010142
SP000010142
1
Electrical Characteristics at T
Parameter
Insertion loss
I
I
I
Isolation
V
V
V
AC Characteristics
Diode capacitance
V
V
V
Reverse parallel resistance
V
Forward resistance
I
I
Charge carrier life time
I
R
I-region width
BA892-02L in series configuration, Z = 50
F
F
F
F
F
F
R
R
R
R
R
R
R
L
= 0.1 mA, f = 1.8 GHz
= 3 mA, f = 1.8 GHz
= 10 mA, f = 1.8 GHz
= 3 mA, f = 100 MHz
= 10 mA, f = 100 MHz
= 10 mA, I
= 0 V, f = 100 MHz
= 0 V, f = 470 MHz
= 0 V, f = 1 GHz
= 100
= 1 V, f = 1 MHz
= 3 V, f = 1 MHz
= 0 V, f = 100 MHz
= 0 V, f = 100 MHz
1)
R
1)
= 6 mA, measured at I
A
= 25°C, unless otherwise specified
R
= 3mA,
3
Symbol
I
I
C
R
r
W
L
SO
f
T
P
rr
I
min.
0.65
0.6
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.92
0.85
0.45
0.36
23.5
10.5
100
typ.
120
0.1
0.5
0.4
5.5
BA592/BA892...
3
1
max.
2007-04-19
1.4
1.1
0.7
0.5
-
-
-
-
-
-
-
-
-
-
Unit
pF
ns
dB
k
µm