BF1212R,215 NXP Semiconductors, BF1212R,215 Datasheet - Page 5

• Manufacturer Part Number: BF1212R,215
• Description: MOSFET N-CH DUAL GATE 6V SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BF1212R,215

• Package / Case: SC-61B
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 35@5VdB
• Noise Figure (max): 1.8dB
• Package Type: SOT-143R
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/1.1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.9@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1963-2; 934057518215; BF1212R

NXP Semiconductors
DYNAMIC CHARACTERISTICS
Common source; T
Note
1. Measured in test circuit Fig.21.
2003 Nov 14
y
C
C
C
C
F
G
X
SYMBOL
mod
N-channel dual-gate MOS-FETs
ig1-ss
ig2-ss
oss
rss
tr
fs

forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance f = 1 MHz
noise figure
power gain
cross-modulation
amb
PARAMETER
= 25 C; V
G2-S
= 4 V; V
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
f = 200 MHz; G
G
f = 400 MHz; G
G
f = 800 MHz; G
G
input level for k = 1%; f
f
unw
L
L
L
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
DS
= 0.5 mS; B
= 1 mS; B
= 1 mS; B
= 60 MHz; note 1
= 5 V; I
j
= 25 C
D
CONDITIONS
L
L
S
= B
= B
= 12 mA; unless otherwise specified.
S
S
S
L
S
S
= 20 mS; B
5
= Y
= Y
= B
= 2 mS; B
= 2 mS; B
= 3.3 mS; B
L (opt)
L (opt)
S (opt)
S (opt)
L (opt)
w
= 50 MHz;
BF1212; BF1212R; BF1212WR
S
S
S
= 0
= B
= B
S
= B
S (opt)
S (opt)
S (opt)
;
;
;
28










90

100
MIN.
33
1.7
1.1
0.9
15
4
0.9
1.1
35
30
25

89
104
TYP.
Product specification
43
2.2


30

1.6
1.8






MAX.
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBV
dBV
dBV
UNIT