BF1212R,215 NXP Semiconductors, BF1212R,215 Datasheet - Page 6

• Manufacturer Part Number: BF1212R,215
• Description: MOSFET N-CH DUAL GATE 6V SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BF1212R,215

• Package / Case: SC-61B
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 35@5VdB
• Noise Figure (max): 1.8dB
• Package Type: SOT-143R
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/1.1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.9@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1963-2; 934057518215; BF1212R

NXP Semiconductors
2003 Nov 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
Fig.7
(1) V
(2) V
(3) V
(4) V
(1) V
(2) V
(3) V
(4) V
(mA)
(μA)
I G1
Fig.5 Transfer characteristics; typical values.
100
I D
30
20
10
80
60
40
20
0
G2-S
G2-S
G2-S
G2-S
0
G2-S
G2-S
G2-S
G2-S
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
0.5
0.5
(5) V
(6) V
(7) V
(5) V
(6) V
(7) V
1
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
1
(2)
(3)
= 2 V.
= 1.5 V.
= 1 V.
= 2 V.
= 1.5 V.
= 1 V.
1.5
(1)
1.5
(4)
(5)
(6)
(7)
V G1-S (V)
V G1-S (V)
2
(1)
V
T
V
T
j
j
DS
DS
= 25 C.
= 25 C.
MLE235
MLE233
(2)
= 5 V.
= 5 V.
(5)
(3)
(4)
(6)
(7)
2.5
2
6
handbook, halfpage
handbook, halfpage
Fig.8
(1) V
(2) V
(3) V
(4) V
(5) V
(1) V
(2) V
(3) V
(4) V
(mA)
(mS)
y fs
I D
Fig.6 Output characteristics; typical values.
40
30
20
10
32
24
16
BF1212; BF1212R; BF1212WR
G1-S
G1-S
G1-S
G1-S
G1-S
0
G2-S
G2-S
G2-S
G2-S
8
0
0
0
Forward transfer admittance as a function
of drain current; typical values.
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
(7)
4
2
(6) V
(7) V
(8) V
(9) V
(5) V
(6) V
(7) V
8
(6)
G1-S
G1-S
G1-S
G1-S
G2-S
G2-S
G2-S
= 1.1 V.
= 1.0 V.
= 0.9 V.
= 0.8 V.
= 2 V.
= 1.5 V.
= 1 V.
12
(5)
4
Product specification
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(3)
V DS (V)
16
V
T
V
T
I D (mA)
(2)
j
j
G2-S
DS
= 25 C.
= 25 C.
MLE236
MLE234
= 5 V.
(1)
(4)
= 4 V.
20
6