BF545C,215 NXP Semiconductors, BF545C,215 Datasheet - Page 12

• Manufacturer Part Number: BF545C,215
• Description: JFET N-CHAN 30V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BF545C,215

• Package / Case: SST3 (SOT-23-3)
• Transistor Type: N-Channel JFET
• Voltage - Rated: 30V
• Current Rating: 25mA
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: - 30 V
• Continuous Drain Current: 25 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 30 V
• Mounting Style: SMD/SMT
• Channel Type: N
• Gate-source Voltage (max): -30V
• Pin Count: 3
• Drain-gate Voltage (max): -30V
• Drain-source Volt (max): 30V
• Operating Temperature (min): -65C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1966-2; 933912920215; BF545C T/R

Philips Semiconductors
9. Package outline
Fig 23. Package outline.
9397 750 13391
Product data sheet
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
Rev. 03 — 5 August 2004
2
1.9
e
w
0.95
B
M
e
1
scale
B
EIAJ
1
BF545A; BF545B; BF545C
2.5
2.1
H
E
N-channel silicon junction field-effect transistors
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
EUROPEAN
w
L p
A
Q
c
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23
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