BF545C,215 NXP Semiconductors, BF545C,215 Datasheet - Page 9

• Manufacturer Part Number: BF545C,215
• Description: JFET N-CHAN 30V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BF545C,215

• Package / Case: SST3 (SOT-23-3)
• Transistor Type: N-Channel JFET
• Voltage - Rated: 30V
• Current Rating: 25mA
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: - 30 V
• Continuous Drain Current: 25 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 30 V
• Mounting Style: SMD/SMT
• Channel Type: N
• Gate-source Voltage (max): -30V
• Pin Count: 3
• Drain-gate Voltage (max): -30V
• Drain-source Volt (max): 30V
• Operating Temperature (min): -65C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1966-2; 933912920215; BF545C T/R

Philips Semiconductors
9397 750 13391
Product data sheet
Fig 12. Drain current as a function of gate-source
Fig 14. Drain current as a function of gate-source
( A)
( A)
I
I
10
10
10
10
10
10
D
D
10
10
10
10
10
10
1
1
3
2
1
2
3
3
2
1
2
3
BF545A
V
voltage; typical values.
BF545C
V
voltage; typical values.
DS
DS
3
8
= 15 V; T
= 15 V; T
6
j
j
= 25 C.
= 25 C.
2
4
1
2
V
GS
V
GS
(V)
mbb461
mbb455
(V)
Rev. 03 — 5 August 2004
0
0
BF545A; BF545B; BF545C
Fig 13. Drain current as a function of gate-source
Fig 15. Gate current as a function of drain-gate
N-channel silicon junction field-effect transistors
( A)
(pA)
(1) I
(2) I
(3) I
(4) I
I
I
10
10
10
10
10
D
G
10
10
10
10
10
1
1
3
2
1
2
3
2
1
2
BF545B
V
voltage; typical values.
I
voltage; typical values.
D
D
D
D
GSS
0
6
DS
= 10 mA only for BF545B and BF545C; T
= 10 mA.
= 1 mA.
= 0.1 mA.
.
= 15 V; T
(4)
4
j
= 25 C.
4
8
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
12
2
V
16
GS
V
(1)
(2)
(3)
(V)
DG
mbb458
mbb454
(V)
j
= 25 C.
20
0
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