BLF245,112 NXP Semiconductors, BLF245,112 Datasheet
BLF245,112
Specifications of BLF245,112
933817060112
BLF245
BLF245
Related parts for BLF245,112
BLF245,112 Summary of contents
Page 1
DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF245 VHF power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 ...
Page 2
Philips Semiconductors VHF power MOS transistor FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF ...
Page 3
Philips Semiconductors VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GS I drain current (DC total power dissipation tot T storage temperature ...
Page 4
Philips Semiconductors VHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth V gate-source voltage ...
Page 5
Philips Semiconductors VHF power MOS transistor 6 handbook, halfpage T.C. (mV/ valid for 125 Fig.4 Temperature coefficient of gate-source voltage ...
Page 6
Philips Semiconductors VHF power MOS transistor 20 handbook, halfpage C rs (pF MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-B OPERATION ...
Page 7
Philips Semiconductors VHF power MOS transistor 20 handbook, halfpage (dB Class-B operation mA 175 MHz ...
Page 8
Philips Semiconductors VHF power MOS transistor handbook, full pagewidth C1 50 input 175 MHz. 2003 Sep D.U. Fig.13 Test circuit for class-B operation. 8 Product ...
Page 9
Philips Semiconductors VHF power MOS transistor List of components class-B test circuit (see Fig.14) COMPONENT DESCRIPTION C1 film dielectric trimmer C2, C8 film dielectric trimmer C3 multilayer ceramic chip capacitor C4, C6 multilayer ceramic chip capacitor C5 ceramic capacitor C7 ...
Page 10
Philips Semiconductors VHF power MOS transistor handbook, full pagewidth C1 Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board; the other side is unetched copper and serves as an earth. Earth connections ...
Page 11
Philips Semiconductors VHF power MOS transistor 40 handbook, halfpage Class-B operation mA ...
Page 12
Philips Semiconductors VHF power MOS transistor BLF245 scattering parameters mA; note (MHz 0.91 48.3 10 0.80 81.4 20 0.71 116.7 30 0.68 132.3 ...
Page 13
Philips Semiconductors VHF power MOS transistor BLF245 scattering parameters mA; note (MHz 0.95 40.5 10 0.86 71.3 20 0.77 108.6 30 0.73 126.8 ...
Page 14
Philips Semiconductors VHF power MOS transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 5.82 7.47 0.18 9.73 mm ...
Page 15
Philips Semiconductors VHF power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...
Page 16
Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...