BLF245,112 NXP Semiconductors, BLF245,112 Datasheet - Page 9

• Manufacturer Part Number: BLF245,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF245,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 15.5dB
• Voltage - Rated: 65V
• Current Rating: 6A
• Noise Figure: 2dB
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 68000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 15.5@28V/12@12.5VdB
• Noise Figure (max): 2(Typ)dB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.9S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 67%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2402; 933817060112; BLF245; BLF245

Philips Semiconductors
List of components class-B test circuit (see Fig.14)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (
2003 Sep 02
C1
C2, C8
C3
C4, C6
C5
C7
C9
C10
L1
L2, L3
L4
L5
L6
R1
R2
R3
COMPONENT
VHF power MOS transistor
thickness
1
16
inch.
film dielectric trimmer
film dielectric trimmer
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
ceramic capacitor
multilayer ceramic chip capacitor; note 1 18 pF
multilayer ceramic chip capacitor; note 1 27 pF
multilayer ceramic chip capacitor; note 1 24 pF
3 turns enamelled 0.5 mm copper wire
stripline; note 2
6 turns enamelled 1.5 mm copper wire
grade 3B Ferroxcube RF choke
2 turns enamelled 1.5 mm copper wire
metal film resistor
metal film resistor
metal film resistor
DESCRIPTION
9
4 to 40 pF
5 to 60 pF
100 pF
100 nF
100 pF
13.5 nH
30
98 nH
24.5 nH
1 k
1 M
10
VALUE
length 3.5 mm
int. dia. 2 mm
leads 2
10
length 12.5 mm
int. dia. 5 mm
leads 2
length 4 mm
int. dia. 5 mm
leads 2
DIMENSIONS
6 mm
2 mm
2 mm
2 mm
r
= 4.5),
2222 809 07008
2222 809 07011
2222 854 13101
2222 852 47104
2222 680 10101
4312 020 36640
Product specification
CATALOGUE NO.
BLF245