BLF245,112 NXP Semiconductors, BLF245,112 Datasheet - Page 12

• Manufacturer Part Number: BLF245,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF245,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 15.5dB
• Voltage - Rated: 65V
• Current Rating: 6A
• Noise Figure: 2dB
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 68000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 15.5@28V/12@12.5VdB
• Noise Figure (max): 2(Typ)dB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.9S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 67%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2402; 933817060112; BLF245; BLF245

Philips Semiconductors
BLF245 scattering parameters
V
Note
1. For more extensive s-parameters see internet:
2003 Sep 02
DS
VHF power MOS transistor
f (MHz)
http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast
1000
= 12.5 V; I
100
125
150
175
200
250
300
350
400
450
500
600
700
800
900
10
20
30
40
50
60
70
80
90
5
D
= 50 mA; note 1
|s
0.91
0.80
0.71
0.68
0.69
0.71
0.73
0.75
0.77
0.79
0.81
0.84
0.87
0.91
0.92
0.94
0.95
0.96
0.96
0.97
0.97
0.96
0.96
0.94
0.95
0.95
11
|
s
11
176.9
173.5
170.6
167.8
162.4
157.2
152.4
147.8
142.7
116.7
132.3
140.3
145.2
148.6
151.1
153.1
155.1
157.3
161.9
165.0
167.9
171.0
175.5
179.8
48.3
81.4
25.72
19.43
11.79
|s
8.04
5.97
4.67
3.76
3.10
2.61
2.24
1.94
1.39
1.04
0.81
0.65
0.44
0.32
0.24
0.19
0.16
0.14
0.13
0.13
0.14
0.16
0.18
21
|
s
21
147.1
125.8
102.4
89.7
80.8
73.6
67.5
62.4
57.9
53.7
49.8
41.2
35.4
30.8
26.6
21.6
19.2
19.7
22.1
26.1
31.6
43.5
52.9
58.9
63.1
68.2
12
|s
0.03
0.05
0.06
0.06
0.06
0.06
0.05
0.05
0.05
0.04
0.04
0.03
0.02
0.01
0.01
0.02
0.03
0.04
0.05
0.06
0.08
0.10
0.12
0.13
0.15
1.70
12
|
s
12
57.9
36.8
15.0
22.4
72.1
83.0
86.1
86.1
86.2
84.7
82.6
80.0
77.9
74.4
40.5
3.3
10.2
14.8
18.4
21.3
23.8
25.9
28.0
23.3
4.4
8.4
|s
0.92
0.81
0.71
0.69
0.69
0.71
0.73
0.75
0.77
0.79
0.81
0.85
0.88
0.91
0.92
0.95
0.96
0.97
0.97
0.97
0.98
0.98
0.97
0.97
0.95
3.52
Product specification
22
|
s
BLF245
22
177.5
174.9
172.6
168.4
164.4
160.6
157.1
115.5
131.1
139.0
143.8
147.2
149.9
152.1
154.2
156.1
160.1
163.4
166.3
168.9
173.3
176.8
179.8
46.0
47.8
81.3