BLF861A,112 NXP Semiconductors, BLF861A,112 Datasheet - Page 3

• Manufacturer Part Number: BLF861A,112
• Description: TRANSISTOR RF LDMOS SOT540A
• Manufacturer: NXP Semiconductors

Specifications of BLF861A,112

• Package / Case: SOT540A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 1A
• Voltage - Test: 32V
• Power - Output: 150W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.16 Ohm (Typ)
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 18 A
• Power Dissipation: 318000 mW
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 150W
• Power Gain (typ)@vds: 14.5@32V/14(Min)@32VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 4S
• Drain Source Resistance (max): 160(Typ)mohm
• Input Capacitance (typ)@vds: 82@32VpF
• Output Capacitance (typ)@vds: 40@32VpF
• Reverse Capacitance (typ): 6@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/PAL BG Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 318000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2407; 934056499112; BLF861A; BLF861A

Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
Note
1. Capacitance values without internal matching.
2001 Feb 09
R
R
V
V
I
I
I
g
R
C
C
C
handbook, halfpage
j
DSS
DSX
GSS
fs
SYMBOL
SYMBOL
(BR)DSS
GSth
th j-mb
th mb-h
= 25 C; per section; unless otherwise specified.
DSon
iss
oss
rss
UHF power LDMOS transistor
V
Fig.2
GS
C oss
(pF)
100
= 0; f = 1 MHz; T
80
60
40
20
0
0
Output capacitance as a function of
drain-source voltage; typical values per
section.
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
10
j
= 25 C.
PARAMETER
20
30
PARAMETER
40
V DS (V)
MLD510
50
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
= 0; I
= 10 V; I
= 0; V
= V
= 15 V; V
= 10 V; I
= V
= 0; V
= 0; V
= 0; V
GSth
GSth
3
D
CONDITIONS
DS
DS
DS
DS
= 1.5 mA
+ 9 V; V
+ 9 V; I
D
D
= 32 V
= 32 V; f = 1 MHz
= 32 V; f = 1 MHz
= 32 V; f = 1 MHz
= 150 mA
= 4 A
DS
T
= 0
mb
D
DS
= 4 A
= 25 C; P
= 10 V
CONDITIONS
(1)
(1)
(1)
tot
= 318 W
65
4
18
MIN.
4
160
82
40
6
TYP.
Product specification
VALUE
0.55
0.2
BLF861A
5.5
2.2
25
MAX.
UNIT
K/W
K/W
V
V
A
nA
S
m
pF
pF
pF
UNIT
A