BLF861A,112 NXP Semiconductors, BLF861A,112 Datasheet - Page 4

• Manufacturer Part Number: BLF861A,112
• Description: TRANSISTOR RF LDMOS SOT540A
• Manufacturer: NXP Semiconductors

Specifications of BLF861A,112

• Package / Case: SOT540A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 1A
• Voltage - Test: 32V
• Power - Output: 150W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.16 Ohm (Typ)
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 18 A
• Power Dissipation: 318000 mW
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 150W
• Power Gain (typ)@vds: 14.5@32V/14(Min)@32VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 4S
• Drain Source Resistance (max): 160(Typ)mohm
• Input Capacitance (typ)@vds: 82@32VpF
• Output Capacitance (typ)@vds: 40@32VpF
• Reverse Capacitance (typ): 6@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/PAL BG Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 318000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2407; 934056499112; BLF861A; BLF861A

Philips Semiconductors
APPLICATION INFORMATION
RF performance in a common source 860 MHz test circuit. T
Note
1. Sync compression: input sync
Ruggedness in class-AB operation
The BLF861A is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load
mismatch errors under the nominal power condition.
2001 Feb 09
handbook, halfpage
CW; class-AB
2-tone; class-AB
PAL BG (TV); class-AB
UHF power LDMOS transistor
CW, class-AB operation; V
P
Fig.3
L
= 170 W (total device); T
OPERATION
( )
z i
12
MODE OF
8
4
0
400
Input impedance as a function of frequency
(series components); typical push-pull
values.
500
DS
DS
600
h
= 32 V; f = 860 MHz at rated load power.
= 25 C.
= 32 V; I
f
1
f
(ch 69)
1
(MHz)
= 860.1
860
860
= 860
f
700
DQ
x i
r i
= 1 A;
33%; output sync 27% measured in an 860 MHz test circuit.
800
V
(V)
32
32
32
f (MHz)
DS
MCD871
900
I
(A)
DQ
1
1
1
4
h
(peak sync)
150 (PEP)
= 25 C; R
handbook, halfpage
typ. 170
> 150
150
CW, class-AB operation; V
P
Fig.4
(W)
P
L
L
= 170 W (total device); T
( )
Z L
10
5
0
5
400
Load impedance as a function of frequency
(series components); typical push-pull
values.
th mb-h
typ. 14.5
>13.5
(dB)
500
>14
>14
G
= 0.15 K/W; unless otherwise specified.
p
DS
600
h
= 25 C.
= 32 V; I
>50
>40
>40
(%)
D
R L
X L
700
DQ
= 1 A;
Product specification
(dBc)
d
800
Im
25
BLF861A
f (MHz)
MCD872
900
note 1
(dB)
G
1
p