BLF861A,112 NXP Semiconductors, BLF861A,112 Datasheet - Page 6

• Manufacturer Part Number: BLF861A,112
• Description: TRANSISTOR RF LDMOS SOT540A
• Manufacturer: NXP Semiconductors

Specifications of BLF861A,112

• Package / Case: SOT540A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 1A
• Voltage - Test: 32V
• Power - Output: 150W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.16 Ohm (Typ)
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 18 A
• Power Dissipation: 318000 mW
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 150W
• Power Gain (typ)@vds: 14.5@32V/14(Min)@32VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 4S
• Drain Source Resistance (max): 160(Typ)mohm
• Input Capacitance (typ)@vds: 82@32VpF
• Output Capacitance (typ)@vds: 40@32VpF
• Reverse Capacitance (typ): 6@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/PAL BG Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 318000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2407; 934056499112; BLF861A; BLF861A

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input
C17
C16
R4
C18
C19
R5
R6
R2
R3
C1
L1
L2
B1
V bias
C2
C3
C4
Fig.8 Class-AB common source broadband test circuit.
L4
L3
C5
L5
L6
C6
C7
R1
L7
L8
C8
C9
C10
L10
L9
19
L
L11
L12
C11
C12 C13
L14
L13
C14
L15
L16
B2
C20
C22
L17
C21
C23
L18
V S
C15
C24
C26
C25
MCD876
output
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