BLF571,112 NXP Semiconductors, BLF571,112 Datasheet - Page 2

• Manufacturer Part Number: BLF571,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF571,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 27.5dB
• Voltage - Rated: 110V
• Current Rating: 3.6A
• Current - Test: 50mA
• Voltage - Test: 50V
• Power - Output: 20W
• Forward Transconductance Gfs (max / Min): 1.8 S
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.34 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 20 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4735; 934061406112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF571_2
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLF571
Symbol
V
V
I
T
T
Symbol
R
D
stg
j
DS
GS
th(j-c)
Connected to flange.
Parameter
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
Package
Name
-
Rev. 02 — 24 February 2009
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
Conditions
[1]
Simplified outline
Conditions
T
case
HF / VHF power LDMOS transistor
= 80 C; P
1
2
3
L
= 20 W
Graphic symbol
Min
-
-
-
© NXP B.V. 2009. All rights reserved.
0.5
65
BLF571
2
Max
110
+11
3.6
+150
225
sym112
Version
SOT467C
Typ Unit
2.9
1
3
2 of 13
K/W
Unit
V
V
A
C
C