BLF571,112 NXP Semiconductors, BLF571,112 Datasheet - Page 4

• Manufacturer Part Number: BLF571,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF571,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 27.5dB
• Voltage - Rated: 110V
• Current Rating: 3.6A
• Current - Test: 50mA
• Voltage - Test: 50V
• Power - Output: 20W
• Forward Transconductance Gfs (max / Min): 1.8 S
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.34 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 20 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4735; 934061406112

NXP Semiconductors
7. Application information
BLF571_2
Product data sheet
6.1 Ruggedness in class-AB operation
7.1 Impedance information
The BLF571 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: V
f = 225 MHz.
Table 8.
Simulated Z
f
MHz
225
Fig 1.
Fig 2.
V
Output capacitance as a function of drain-source voltage; capacitance value
without internal matching
Definition of transistor impedance
GS
Typical impedance
S
and Z
= 0 V; f = 1 MHz.
L
test circuit impedances.
C
Rev. 02 — 24 February 2009
(pF)
oss
50
40
30
20
10
0
0
Z
9.7 + j31.5
S
10
gate
Z
S
20
001aaf059
30
Z
drain
L
DS
HF / VHF power LDMOS transistor
= 50 V; I
40
001aaj172
V
DS
(V)
Z
31.7 + j29.3
L
50
Dq
= 50 mA; P
© NXP B.V. 2009. All rights reserved.
BLF571
L
= 20 W;
4 of 13