BF1109WR,115 NXP Semiconductors, BF1109WR,115 Datasheet - Page 2

• Manufacturer Part Number: BF1109WR,115
• Description: MOSFET N-CH 11V 30MA CMPAK-4
• Manufacturer: NXP Semiconductors

Specifications of BF1109WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Gain: 20dB
• Voltage - Rated: 11V
• Current Rating: 30mA
• Noise Figure: 1.5dB
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 11 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934050280115; BF1109WR T/R; BF1109WR T/R

NXP Semiconductors
FEATURES
 Short channel transistor with high
 Low noise gain controlled amplifier
 Internal self-biasing circuit to
APPLICATIONS
 VHF and UHF applications with 9 V
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1109,
BF1109R and BF1109WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
QUICK REFERENCE DATA
1997 Dec 08
V
I
P
y
C
C
F
X
T
SYMBOL
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
D
forward transfer admittance to input
capacitance ratio
up to 1 GHz
ensure good cross-modulation
performance during AGC and good
DC stabilization.
supply voltage, such as television
tuners and professional
communications equipment.
j
DS
tot
mod
N-channel dual-gate MOS-FETs
ig1-ss
rss
fs

drain-source voltage
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
PARAMETER
PINNING
handbook, 2 columns
BF1109 marking code: NFp.
PIN
1
2
3
4
Fig.1
T
f = 1 MHz
f = 800 MHz
input level for k = 1% at 40 dB AGC 100
amb
Top view
1
4
 80 C
source
drain
gate 2
gate 1
Simplified outline
(SOT143B).
CAUTION
DESCRIPTION
2
CONDITIONS
MSB014
3
2
ok, halfpage
handbook, 2 columns
BF1109R marking code: NBp.
BF1109WR marking code: NB.








MIN.
BF1109; BF1109R;
Fig.2
Fig.3
3
2
Top view



30
2.2
25
1.5


Simplified outline
(SOT143R).
Simplified outline
(SOT343R).
TYP.
3
2
Top view
Product specification
BF1109WR
11
30
200

2.7
40
2.5

150
MAX.
MSB035
MSB842
4
1
4
1
V
mA
mW
mS
pF
fF
dB
dBV
C
UNIT