BF1109WR,115 NXP Semiconductors, BF1109WR,115 Datasheet - Page 8

• Manufacturer Part Number: BF1109WR,115
• Description: MOSFET N-CH 11V 30MA CMPAK-4
• Manufacturer: NXP Semiconductors

Specifications of BF1109WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Gain: 20dB
• Voltage - Rated: 11V
• Current Rating: 30mA
• Noise Figure: 1.5dB
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 11 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934050280115; BF1109WR T/R; BF1109WR T/R

NXP Semiconductors
1997 Dec 08
handbook, full pagewidth
handbook, full pagewidth
N-channel dual-gate MOS-FETs
V
L1 = 45 nH, 4 turns, internal diameter = 4 mm, 0.8 mm copper wire.
L2 = 160 nH, 3 turns, internal diameter = 8 mm, 0.8 mm copper wire; tapped at approximately half a turn from the cold side, to set G
C1 adjusted for G
V
L1 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.
L2 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.
L3 = 11 turns 0.5 mm copper wire without spacing, internal diameter = 3 mm, L = approx. 200 nH.
DS
DS
= 9 V, G
= 9 V, G
S
S
= 2 mS, G
= 3.3 mS, G
S
= 2 mS.
input
50 Ω
L
= 0.5 mS, f = 200 MHz.
L
= 1 mS, f = 800 MHz.
input
50 Ω
1 nF
5.5 pF
C1
2 to 18 pF
1 nF
L1
L1
1 nF
1 nF
1 nF
15
pF
V AGC
V AGC
Fig.16 Gain test circuit.
Fig.17 Gain test circuit.
0.5 to 3.5 pF
47 kΩ
1 nF
47 kΩ
BB405
G2
G1
G2
G1
V tun input
BF1109WR
BF1109R
BF1109WR
BF1109
BF1109R
BF1109
330 kΩ
8
1 nF
D
S
S
D
1 nF
1 nF
BF1109; BF1109R; BF1109WR
L2
V DS
0.5 to 3.5 pF
2 μH
BB405
10 pF
1 nF
L2
V tun output
V DS
output
330 kΩ
50 Ω
1 nF
L3
4 to 40 pF
1 nF
1 nF
MDA624
MDA625
output
50 Ω
Product specification
L
= 0.5 mS.