NE3514S02-T1D-A CEL, NE3514S02-T1D-A Datasheet - Page 3
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NE3514S02-T1D-A
Manufacturer Part Number
NE3514S02-T1D-A
Description
HJ-FET NCH 10DB S02
Manufacturer
CEL
Specifications of NE3514S02-T1D-A
Transistor Type
HFET
Frequency
20GHz
Gain
10dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.75dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
S02
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
55 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE3514S02-T1D-A
Manufacturer:
RENESAS
Quantity:
12 400
Document No. PG10593EJ01V0DS (1st edition)
Date Published February 2006 CP(N)
Printed in Japan
FEATURES
• Super low noise figure and high associated gain
• Micro-X plastic (S02) package
APPLICATIONS
• 20 GHz-band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE3514S02-T1C
NE3514S02-T1D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on 1.08 cm
Part Number
NF = 0.75 dB TYP., G
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Part number for sample order: NE3514S02
Parameter
NE3514S02-T1C-A
NE3514S02-T1D-A
Order Number
K BAND SUPER LOW NOISE AMPLIFIER
a
2
= 10 dB TYP. @ f = 20 GHz
× 1.0 mm (t) glass epoxy PCB
HETERO JUNCTION FIELD EFFECT TRANSISTOR
Symbol
P
S02 (Pb-Free)
V
V
T
tot
T
I
I
DS
GS
D
G
stg
ch
Note
Package
A
N-CHANNEL HJ-FET
= +25°C)
DATA SHEET
−65 to +125
2 kpcs/reel
10 kpcs/reel
Ratings
Quantity
+125
I
100
165
−3
DSS
4
Marking
D
Unit
mW
mA
µ
°C
°C
V
V
A
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
NEC Compound Semiconductor Devices, Ltd. 2005, 2006
NE3514S02
Supplying Form