NE3514S02-T1D-A CEL, NE3514S02-T1D-A Datasheet - Page 9
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NE3514S02-T1D-A
Manufacturer Part Number
NE3514S02-T1D-A
Description
HJ-FET NCH 10DB S02
Manufacturer
CEL
Specifications of NE3514S02-T1D-A
Transistor Type
HFET
Frequency
20GHz
Gain
10dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.75dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
S02
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
55 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE3514S02-T1D-A
Manufacturer:
RENESAS
Quantity:
12 400
RECOMMENDED SOLDERING CONDITIONS
methods and conditions other than those recommended below, contact your nearby sales office.
Infrared Reflow
Partial Heating
Caution Do not use different soldering methods together (except for partial heating).
This product should be soldered and mounted under the following recommended conditions.
Soldering Method
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
Peak temperature (terminal temperature)
Soldering time (per side of device)
Maximum chlorine content of rosin flux (% mass)
Data Sheet PG10593EJ01V0DS
Soldering Conditions
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 350°C or below
: 3 seconds or less
: 260°C or below
: 0.2%(Wt.) or below
: 0.2%(Wt.) or below
Condition Symbol
NE3514S02
HS350
IR260
For soldering
7