NE3514S02-T1D-A CEL, NE3514S02-T1D-A Datasheet - Page 8
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NE3514S02-T1D-A
Manufacturer Part Number
NE3514S02-T1D-A
Description
HJ-FET NCH 10DB S02
Manufacturer
CEL
Specifications of NE3514S02-T1D-A
Transistor Type
HFET
Frequency
20GHz
Gain
10dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.75dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
S02
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
55 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE3514S02-T1D-A
Manufacturer:
RENESAS
Quantity:
12 400
PACKAGE DIMENSIONS
S02 (UNIT: mm)
6
2
(Side View)
(Top View)
1
3
0.65 TYP.
3.2±0.2
2.2±0.2
3.2±0.2
D
1.7
Data Sheet PG10593EJ01V0DS
PIN CONNECTIONS
4
1. Source
2. Drain
3. Source
4. Gate
4
(Bottom View)
1
3
2.2±0.2
2
NE3514S02