NE3514S02-T1D-A CEL, NE3514S02-T1D-A Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/1/129/cel_sml.jpg)
NE3514S02-T1D-A
Manufacturer Part Number
NE3514S02-T1D-A
Description
HJ-FET NCH 10DB S02
Manufacturer
CEL
Specifications of NE3514S02-T1D-A
Transistor Type
HFET
Frequency
20GHz
Gain
10dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.75dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
S02
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
55 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE3514S02-T1D-A
Manufacturer:
RENESAS
Quantity:
12 400
S-PARAMETERS
4
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
Data Sheet PG10593EJ01V0DS
NE3514S02