ATF-511P8-TR1 Avago Technologies US Inc., ATF-511P8-TR1 Datasheet - Page 4

• Manufacturer Part Number: ATF-511P8-TR1
• Description: IC PHEMT 2GHZ 4.5V 200MA 8-LPCC
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-511P8-TR1

• Gain: 14.8dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 7V
• Current Rating: 1A
• Noise Figure: 1.4dB
• Current - Test: 200mA
• Voltage - Test: 4.5V
• Power - Output: 30dBm
• Package / Case: 8-LPCC
• Power Dissipation Pd: 3W
• Rf Transistor Case: LPCC
• No. Of Pins: 8
• Frequency Max: 6GHz
• Noise Figure Typ: 1.4dB
• Frequency Min: 50MHz
• Continuous Drain Current Id: 16.4µA
• Drain Current Idss Max: 200mA
• Drain Source Voltage Vds: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
RF Input
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in
gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V,
200 mA quiesent bias:
Optimum OIP3
Freq
(GHz)
0.9
2.0
2.4
3.9
Optimum P1dB
Freq
(GHz)
0.9
2.0
2.4
3.9
1.8 nH
Mag
0.776
0.872
0.893
0.765
Mag
0.773
0.691
0.797
0.602
1.2 pF
Gamma Source
Gamma Source
2.2 µF
DC Supply
Gate
15 Ohm
15 nH
Ang
152
-171
-162
-132
Ang
153
147
164
-163
50 Ohm
.02 λ
110 Ohm
.03 λ
Mag
0.549
0.683
0.715
0.574
Mag
0.784
0.841
0.827
0.794
Gamma Load
Gamma Load
DUT
Ang
-178
-179
-174
-144
Ang
-173
-166
-166
-155
110 Ohm
.03 λ
OIP3
(dBm)
43.3
43.1
42.8
41.7
OIP3
(dBm)
38.0
36.4
36.2
35.4
50 Ohm
.02 λ
2.2 µF
DC Supply
Drain
1.2 pF
47 nH
Gain
(dB)
17.94
15.06
14.03
9.47
Gain
(dB)
19.28
10.34
8.43
7.03
2.7 nH
P1dB
(dBm)
30.12
29.90
P1dB
(dBm)
31.2
29.63
29.02
31.9
31.4
31
RF Output
PAE
(%)
63.8
66.8
64.5
52
PAE
(%)
54.23
38.15
37.38
32.72