ATF-52189-BLK Avago Technologies US Inc., ATF-52189-BLK Datasheet - Page 2

• Manufacturer Part Number: ATF-52189-BLK
• Description: IC PHEMT 2GHZ 4.5V 200MA SOT-89
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-52189-BLK

• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 16dB
• Voltage - Rated: 7V
• Current Rating: 500mA
• Noise Figure: 1.5dB
• Current - Test: 200mA
• Voltage - Test: 4.5V
• Power - Output: 27dBm
• Package / Case: SC-70-3, SOT-323-3
• Drain Source Voltage Vds: 7V
• Continuous Drain Current Id: 500mA
• Power Dissipation Pd: 1.5W
• Noise Figure Typ: 1.5dB
• No. Of Pins: 4
• Peak Reflow Compatible (260 C): Yes
• No. Of Transistors: 1
• Current Gain-bandwidth Typ: 6GHz
• Marking, Smd: 2Gx
• Rohs Compliant: Yes
• Current Gain-bandwidth Min: 50MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2
ATF-52189 Absolute Maximum Ratings
I
I
P
P
T
T
ATF-52189 Electrical Specifications
T
Symbol
Vgs
Vth
Ids
Gm
Igss
NF
G
OIP3
P1dB
PAE
NF
G
OIP3
P1dB
Symbol
V
V
V
ds
gs
ch
stg
diss
in max.
ds
gs
gd
A
= 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.
Parameters and Test Conditions
Operational Gate Voltage
Threshold Voltage
Drain to Source Current
Transconductance
Gate Leakage Current
Noise Figure
Gain
Output 3
Output 1dB Compressed
Power Added Efficiency
Noise Figure
Gain
Output 3rd Order Intercept Point
Output 1dB Compressed
Parameter
Drain–Source Voltage
Gate–Source Voltage
Gate Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
[1]
[1]
rd
Order Intercept Point
[2]
[2]
[2]
[1]
[1]
[2]
[3]
[1]
[1]
[1]
Units
V
V
V
mA
mA
W
dBm
°C
°C
Vds = 4.5V, Ids = 200 mA
Vds = 4.5V, Ids = 16 mA
Vds = 4.5V, Vgs = 0V
Vds = 4.5V, Gm = ∆Ids/∆Vgs;
∆Vgs = Vgs1 – Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Vds = 0V, Vgs = -4V
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f=900 MHz
f=2.0 GHz
f=2.4 GHz
f=900 MHz
f=2.0 GHz
f=2.4 GHz
f=900 MHz
f=2.0 GHz
f=2.4 GHz
f=900 MHz
f=2.0 GHz
f=2.4 GHz
Absolute
Maximum
7
-5 to 1.0
-5 to 1.0
500
46
1.5
+27
150
-65 to 150
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
%
%
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
Notes:
1. Operation of this device above any one of
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature T
4. Channel-to-board thermal resistance
these parameters may cause permanent
damage.
Derate 19.25 mW/°C for T
measured using 150°C Liquid Crystal
Measurement method.
Min.
—
—
—
—
-20.0
—
—
14.8
—
38.5
—
25.5
—
40.0
—
—
—
—
—
14.8
—
—
38.5
—
—
25.5
—
Thermal Resistance
θ
ch-b
continued on next page
= 52°C/W
Typ.
0.62
0.28
14.8
1300
0.49
1.50
1.25
16.0
16.5
42.0
42.0
27.0
27.2
55.0
50.0
1.25
1.50
1.60
16.5
16.0
13.5
42.0
42.0
41.0
27.2
27.0
26.0
B
> 72°C.
[2,4]
B
Max.
—
—
—
—
—
—
—
17.8
—
—
—
—
—
—
—
—
—
—
—
17.8
—
—
—
—
—
—
is 25°C.