BLF246,112 NXP Semiconductors, BLF246,112 Datasheet
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BLF246,112
Specifications of BLF246,112
Available stocks
Related parts for BLF246,112
BLF246,112 Summary of contents
Page 1
DISCRETE SEMICONDUCTORS DATA SHEET BLF246 VHF power MOS transistor Product specification Supersedes data of 1996 Oct 21 M3D060 2003 Aug 05 ...
Page 2
Philips Semiconductors VHF power MOS transistor FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch. APPLICATIONS Large signal amplifier applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS ...
Page 3
Philips Semiconductors VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage drain current D P total power dissipation tot T storage temperature ...
Page 4
Philips Semiconductors VHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth V gate-source voltage ...
Page 5
Philips Semiconductors VHF power MOS transistor 2 handbook, halfpage T.C. (mV/ valid for Fig.4 Temperature coefficient of gate-source voltage as ...
Page 6
Philips Semiconductors VHF power MOS transistor 300 handbook, halfpage C rs (pF) 200 100 MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION RF ...
Page 7
Philips Semiconductors VHF power MOS transistor 20 handbook, halfpage (dB Class-B operation 0 108 MHz ...
Page 8
Philips Semiconductors VHF power MOS transistor List of components (see Figs 11 and 12). COMPONENT DESCRIPTION C1, C4, C5, C8, multilayer ceramic chip capacitor C14 C2, C3, C6, C7 film dielectric trimmer C9 electrolytic capacitor C10 multilayer ceramic chip capacitor; ...
Page 9
Philips Semiconductors VHF power MOS transistor handbook, full pagewidth STRAP 70 C10 Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve ...
Page 10
Philips Semiconductors VHF power MOS transistor 5 handbook, halfpage 100 Class-B operation 0 ...
Page 11
Philips Semiconductors VHF power MOS transistor BLF246 scattering parameters mA; note (MHz 0.83 91.4 10 0.75 125.6 20 0.73 147.1 30 0.75 154.3 ...
Page 12
Philips Semiconductors VHF power MOS transistor BLF246 scattering parameters 100 mA; note (MHz 0.81 113.3 10 0.77 142.3 20 0.76 158.6 30 0.77 163.5 ...
Page 13
Philips Semiconductors VHF power MOS transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 7.27 5.82 0.16 12.86 ...
Page 14
Philips Semiconductors VHF power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...
Page 15
Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...