BLF246,112 NXP Semiconductors, BLF246,112 Datasheet - Page 4
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BLF246,112
Manufacturer Part Number
BLF246,112
Description
TRANSISTOR VHF PWR DMOS SOT121B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF246112.pdf
(15 pages)
Specifications of BLF246,112
Transistor Type
2 N-Channel (Dual)
Frequency
108MHz
Gain
16dB
Voltage - Rated
65V
Current Rating
13A
Current - Test
100mA
Voltage - Test
28V
Power - Output
80W
Package / Case
SOT-121B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933929990112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
CHARACTERISTICS
T
V
2003 Aug 05
V
I
I
V
g
R
I
C
C
C
j
DSS
GSS
DSX
GS
fs
SYMBOL
V
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
VHF power MOS transistor
GS
group indicator
GROUP
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
PARAMETER
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
V
V
V
I
I
I
I
V
V
V
V
D
D
D
D
GS
GS
GS
GS
GS
GS
GS
= 50 mA; V
= 50 mA; V
= 2.5 A or 5 A; V
= 5 A; V
= 0; I
= 0; V
= 20 V; V
= 10 V; V
= 0; V
= 0; V
= 0; V
4
CONDITIONS
D
DS
GS
DS
DS
DS
= 50 mA
GROUP
= 28 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
DS
DS
= 10 V
DS
DS
W
O
Q
R
U
= 10 V
= 10 V
P
S
T
V
X
Y
Z
= 10 V
= 0
DS
= 10 V
65
2
3
MIN.
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.2
0.2
22
225
180
25
TYP.
LIMITS
(V)
Product specification
2.5
1
4.5
100
0.3
MAX.
BLF246
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
mA
V
mV
S
A
pF
pF
pF
UNIT
A