BLF246,112 NXP Semiconductors, BLF246,112 Datasheet - Page 4

• Manufacturer Part Number: BLF246,112
• Description: TRANSISTOR VHF PWR DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF246,112

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 13A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 80W
• Package / Case: SOT-121B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933929990112

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Aug 05
V
I
I
V
g
R
I
C
C
C
j
DSS
GSS
DSX
GS
fs
SYMBOL
V
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
VHF power MOS transistor
GS
group indicator
GROUP
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
PARAMETER
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
V
V
V
I
I
I
I
V
V
V
V
D
D
D
D
GS
GS
GS
GS
GS
GS
GS
= 50 mA; V
= 50 mA; V
= 2.5 A or 5 A; V
= 5 A; V
= 0; I
= 0; V
= 20 V; V
= 10 V; V
= 0; V
= 0; V
= 0; V
4
CONDITIONS
D
DS
GS
DS
DS
DS
= 50 mA
GROUP
= 28 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
DS
DS
= 10 V
DS
DS
W
O
Q
R
U
= 10 V
= 10 V
P
S
T
V
X
Y
Z
= 10 V
= 0
DS
= 10 V
65
2
3
MIN.
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.2
0.2
22
225
180
25
TYP.
LIMITS
(V)
Product specification
2.5
1
4.5
100
0.3
MAX.
BLF246
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
mA
V
mV
S
A
pF
pF
pF
UNIT
A