BLF246,112 NXP Semiconductors, BLF246,112 Datasheet - Page 5

• Manufacturer Part Number: BLF246,112
• Description: TRANSISTOR VHF PWR DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF246,112

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 13A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 80W
• Package / Case: SOT-121B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933929990112

Philips Semiconductors
2003 Aug 05
handbook, halfpage
handbook, halfpage
R DSon
VHF power MOS transistor
V
Fig.4
V
Fig.6
(mV/K)
( )
DS
GS
T.C.
400
300
200
100
= 10 V; valid for T
= 10 V; I
2
0
2
4
6
0
10
0
2
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Drain-source on-state resistance as a
function of junction temperature; typical
values.
D
= 5 A.
h
10
= 25 to 70 C.
50
1
100
1
T ( C)
I D (A)
j
o
MGG105
MBD297
150
10
5
handbook, halfpage
V
Fig.5
V
Fig.7
DS
GS
(pF)
(A)
C
I D
800
600
400
200
= 10 V; T
= 0; f = 1 MHz.
40
30
20
10
0
0
0
0
Drain current as a function of gate-source
voltage; typical values.
Input and output capacitance as functions
of drain-source voltage; typical values.
C os
j
= 25 C.
10
5
10
20
Product specification
15
30
C is
V DS
V GS (V)
MRA930
MGG106
BLF246
(V)
40
20