PD57002-E STMicroelectronics, PD57002-E Datasheet - Page 13

• Manufacturer Part Number: PD57002-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD57002-E

• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 250mA
• Current - Test: 10mA
• Voltage - Test: 28V
• Power - Output: 2W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.25A
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Min)
• Power Gain (typ)@vds: 15(Min)dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Input Capacitance (typ)@vds: 7.1@28VpF
• Output Capacitance (typ)@vds: 5.8@28VpF
• Reverse Capacitance (typ): 0.1@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 45(Min)%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 4750mW
• Vswr (max): 10(Min)
• Screening Level: Military
• Supply Voltage: 36 V
• Peak Power: 200 W typical
• Input Power: 23 dBm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5304-5

PD57002-E
Table 11.
(MHz)
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
Freq
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
50
S-parameter for PD57002-E (V
0.90058
0.986
0.972
0.955
0.934
0.921
0.909
0.897
0.895
0.892
0.889
0.889
0.886
0.891
0.892
0.895
0.897
0.898
0.898
0.902
0.897
0.900
0.898
0.901
0.898
0.897
0.897
0.896
0.895
0.888
IS
11
I
S
11
-102
-109
-115
-121
-125
-130
-134
-137
-141
-144
-147
-149
-152
-155
-157
-159
-162
-164
-166
-167
-170
-171
-173
-18
-34
-50
-63
-75
-85
-94
< Φ
11.58
11.04
10.25
IS
9.35
8.48
7.59
6.93
6.27
5.76
5.23
4.75
4.37
4.00
3.72
3.45
3.23
3.02
2.84
2.66
2.50
2.36
2.24
2.13
2.03
1.92
1.84
1.75
1.67
1.58
1.50
21
I
Doc ID 12332 Rev 3
DS
= 13.5 V I
S
21
165
151
138
126
115
106
98
90
83
76
70
65
59
55
50
46
41
37
33
29
26
22
19
15
12
-1
-2
8
5
2
< Φ
DS
= 150 mA)
0.009
0.017
0.024
0.029
0.032
0.034
0.036
0.037
0.037
0.037
0.037
0.037
0.036
0.035
0.034
0.033
0.032
0.031
0.029
0.028
0.028
0.027
0.026
0.025
0.024
0.023
0.022
0.021
0.021
0.020
IS
12
I
S
Common source s-parameter
12
-13
-19
-23
-29
-32
-36
-40
-43
-47
-49
-53
-56
-59
-63
-65
-71
-74
-76
-85
-97
75
62
49
38
28
19
12
-2
-7
4
< Φ
0.964
0.940
0.931
0.891
0.883
0.856
0.841
0.847
0.840
0.852
0.852
0.853
0.863
0.871
0.878
0.885
0.897
0.895
0.896
0.904
0.906
0.909
0.912
0.910
0.913
0.912
0.909
0.912
0.905
0.900
IS
22
I
S
-103
-107
-111
-116
-119
-123
-126
-129
-132
-134
-137
-140
-142
-144
-147
-149
-150
-152
-153
-154
22
-14
-28
-41
-52
-62
-71
-78
-86
-91
-97
< Φ
13/23